Datasheet > JMSL1040APD

JMSL1040APD

更新时间： 2024-10-15 14:55:15

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	310K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMSL1040APD 数据手册

JMSL1040APD

100V 31m Dual N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

100

2.0

Unit

•

Low R_DS(ON)

Low Gate Charge

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

12.3

R_{DS(ON)_Typ}(@ V_GS= 10V)

m

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

Halogen-free and RoHS-compliant

Applications

•

Power Managerment in Telecom., Industrial Automation, CE

Current Switching in DC/DC & AC/DC Sub-systems

Motor Driving in Power Tool, E-vehicle, Robotics

SOP-8L

Pin Configuration

Top View

Chip-1 & Chip-2

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

SOP-8L

# of Pins

Marking

L1040AD

MSL

Media

Quantity (pcs)

JMSL1040APD-13

-55 to 150 13-inch Reel

4000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

12.3

7.8

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

15.0

11.3

11.4

4.5

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

200

160

120

I_D= 10A

V_DS= 50V

_D= 10A

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.1

Page 1 of 5

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中文翻译

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