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JMSL1018AGD PDF预览

JMSL1018AGD

更新时间: 2024-11-23 14:54:03
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
5页 351K
描述
中压 N-ch (40V ~ 400V)

JMSL1018AGD 数据手册

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JMSL1018AGD  
100V 17.0mN-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
VDS  
Value  
100  
2.0  
31  
Unit  
V
Low RDS(ON)  
Low Gate Charge  
VGS(th)_Typ  
V
D (@ VGS = 10V) (1)  
RDS(ON)_Typ (@ VGS = 10V)  
DS(ON)_Typ (@ VGS = 4.5V)  
A
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
I
17  
m  
m  
R
22  
Halogen-free and RoHS-compliant  
Applications  
Power Managerment in Telecom., Industrial Automation, CE  
Motor Driving in Power Tool, E-vehicle, Robotics  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
PDFN5x6-8L-D  
Pin Configuration  
Top View  
Chip-1 & Chip-2  
D1  
Bottom View Type-A  
Bottom View Type-B  
Top View  
D2  
G1  
G2  
S1  
S2  
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
SL1018D  
MSL  
Media  
Quantity (pcs)  
JMSL1018AGD-13  
PDFN5x6-8L-D  
8
1
-55 to 150 13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
VGS  
±20  
V
TC = 25°C  
31  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
19  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
93  
A
A
24  
29  
EAS  
mJ  
TC = 25°C  
39  
Power Dissipation (4)  
PD  
W
TC = 100°C  
16  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
150  
10  
8
ID = 20A  
VDS = 50V  
D = 20A  
120  
90  
60  
30  
0
I
6
4
2
0
0
3
6
9
12  
15  
0
4
8
12  
16  
20  
VGS (V)  
Qg (nC)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.2  
Page 1 of 5  

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