JMSL1018AGD
100V 17.0m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
100
2.0
31
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
VGS(th)_Typ
V
D (@ VGS = 10V) (1)
RDS(ON)_Typ (@ VGS = 10V)
DS(ON)_Typ (@ VGS = 4.5V)
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
17
m
m
R
22
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN5x6-8L-D
Pin Configuration
Top View
Chip-1 & Chip-2
D1
Bottom View Type-A
Bottom View Type-B
Top View
D2
G1
G2
S1
S2
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
SL1018D
MSL
Media
Quantity (pcs)
JMSL1018AGD-13
PDFN5x6-8L-D
8
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
VGS
±20
V
TC = 25°C
31
Continuous Drain
Current (1)
ID
A
TC = 100°C
19
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
93
A
A
24
29
EAS
mJ
TC = 25°C
39
Power Dissipation (4)
PD
W
TC = 100°C
16
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
150
10
8
ID = 20A
VDS = 50V
D = 20A
120
90
60
30
0
I
6
4
2
0
0
3
6
9
12
15
0
4
8
12
16
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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