JMSL10130AUD
100V 100m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
100
1.7
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
10
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
100
123
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN3x3-8L-D
Pin Configuration
Top View
Chip-1 & Chip-2
D1
Top View
Bottom View
D2
S2
G1
G2
S1
Ordering Information
Device
TJ (°C)
Package
PDFN3x3-8L-D
# of Pins
Marking
L10130A
MSL
Media
Quantity (pcs)
JMSL10130AUD-13
8
1
-55 to 150
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
10.1
6.4
Continuous Drain
Current (1)
ID
A
TC = 100°C
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
31
A
A
4.2
EAS
0.9
mJ
TC = 25°C
22
Power Dissipation (4)
PD
W
TC = 100°C
8.9
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
600
10
8
ID = 2A
VDS = 50V
D = 2A
480
360
240
120
0
I
6
4
2
0
0
0.6
1.2
1.8
2.4
3
0
4
8
12
16
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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