JMSL10130AK
100V 115m N-Ch Power MOSFET
Product Summary
Features
Parameter
Typ.
100
1.7
6
Unit
V
•
•
•
•
Low Gate Charge
100% UIS Tested, 100% Rg Tested
VDS
VGS(th)
ID (@ VGS = 10V) (1)
V
Pb-free Lead Plating
A
RDS(ON) (@ VGS = 10V)
115
144
m
m
Halogen-free and RoHS-compliant
RDS(ON) (@ VGS = 4.5V)
Applications
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
TO-252-3L Top View
D
D
S
G
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL10130AK-13
TO-252-3L
3
SL10130A
1
-55 to 150
13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
VGS
±20
V
TC = 25°C
6
Continuous Drain
Current (1)
ID
A
TC = 100°C
4
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
10
A
A
1.8
EAS
4.9
mJ
TC = 25°C
17
7
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
600
10
ID = 4A
VDS = 50V
D = 5A
480
360
240
120
0
8
6
4
2
0
I
0
0.6
1.2
1.8
2.4
3
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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