JMSL1010AU
100V 9.6m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
1.9
38
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
9.6
12.0
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
PDFN3x3-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
4
8
7
6
5
G
Ordering Information
Device
TJ (°C)
-55 to 150
Package
PDFN3x3-8L
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1010AU-13
8
SL1010A
1
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
38
Continuous Drain
Current (1)
ID
A
TC = 100°C
24
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
153
A
A
30
EAS
45
mJ
TC = 25°C
32
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
12.8
-55 to 150
TJ, TSTG
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
ID = 20A
VDS = 50V
D = 20A
I
6
4
2
0
0
4
8
12
VGS (V)
16
20
0
6
12
18
24
30
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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