JMSL1010AP
100V 9.2m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Typ.
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
1.8
11
VGS(th)_typ
V
D (@ VGS = 10V) (1)
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
RDS(ON) (@ VGS = 10V)
RDS(ON) (@ VGS = 4.5V)
9.2
11.8
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
Top View
Pin Configuration
SOP-8L Top View
SOP-8L Bottom View
D
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1010AP-13
SOP-8L
8
SL1010A
3
-55 to 150 13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TA = 25°C
11.1
8.9
Continuous Drain
Current (1)
ID
A
TA = 70°C
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
34
A
A
32
EAS
51
mJ
TA = 25°C
2.5
Power Dissipation (4)
PD
W
TA = 70°C
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
10
8
ID = 11A
VDS = 50V
D = 11A
40
30
20
10
0
I
6
4
2
0
0
6
12
18
24
30
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.2
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