JMSL1010AK
100V 8.3m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
1.9
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
70
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
8.3
m
m
10.8
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-252-3L Top View
D
D
G
G
S
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1010AK-13
TO-252-3L
3
SL1010A
1
-55 to 150 13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
70
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
T
C = 100°C
44
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
204
31
A
A
EAS
48
mJ
TC = 25°C
89
Power Dissipation (4)
PD
W
T
C = 100°C
36
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
10
8
ID = 20A
VDS = 50V
D = 20A
40
30
20
10
0
I
6
4
2
0
0
6
12
18
24
30
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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