JMSL1010AC
100V 7.9m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra‐low ON-resistance, RDS(ON)
100
1.9
72
Low Gate Charge, Qg
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS and Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
7.9
10.4
m
m
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
D
S
G
G
D
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1010AC-U
TO-220-3L
3
SL1010A
NA
-55 to 150
Tube
50
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
72
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
46
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
180
25
A
A
EAS
94
mJ
TC = 25°C
96
Power Dissipation (4)
PD
W
TC = 100°C
38
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
10
VDS = 50V
D = 20A
ID = 20A
40
30
20
10
0
8
6
4
2
0
I
0
6
12 18
Qg (nC)
24
30
0
5
10
VGS (V)
15
20
JieJie Microelectronics Co., Ltd.
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Rev. 1.0
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