Datasheet > JMSL1009AK

JMSL1009AK

更新时间： 2024-10-15 14:54:55

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	399K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMSL1009AK 数据手册

JMSL1009AK

100V 7.8m N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

Unit

•

Ultra‐low ON-resistance, R_DS(ON)

100

1.7

Low Gate Charge, Q_g

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS and R_gTested

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

7.8

9.9

m

Halogen-free and RoHS-compliant

Applications

•

Power Management in Telecom., Industrial Automation, CE

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Motor Driving in Power Tool, E-vehicle, Robotics

TO-252-3L Top View

Ordering Information

Device

T_J(°C)

-55 to 150

Package

TO-252-3L

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL1009AK-13

SL1009A

13-inch Reel

2500

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

281

E_AS

T_C= 25°C

104

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

41.7

-55 to 150

Junction & Storage Temperature Range

T_J, T_STG

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 50V

I_D= 20A

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 1 of 6

12 3 4 5 6

中文翻译

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