Datasheet > JMSL1008AUN

JMSL1008AUN

更新时间： 2024-11-23 14:48:39

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	346K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JMSL1008AUN 数据手册

JMSL1008AUN

100V 7.4m N-Ch Power MOSFET

Product Summary

Features

Parameter

V_DS

Value

100

1.8

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

7.4

m

9.1

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Load Switching, Quick/Wireless Charging, Motor Driving

DFN3333-8L

Pin Configuration

Bottom View

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

DFN3333-8L

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL1008AUN-13

SL1008A

-55 to 150 13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

100

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±20

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

132

E_AS

122

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

9.3

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 50V

_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 5

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中文翻译

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