JMSL1008AG
100V 6.0m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Typ.
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
1.7
93
VGS(th)
V
D (@ VGS = 10V) (1)
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
RDS(ON) (@ VGS = 10V)
RDS(ON) (@ VGS = 4.5V)
6.0
8.0
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
PDFN5x6-8L
Pin Configuration
Bottom View Type-A
Bottom View Type-B
Top View
D
S
Top View
1
8
7
2
G
3
4
6
5
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1008AG-13
PDFN5x6-8L
8
SL1008A
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
93
Continuous Drain
Current (1)
ID
A
TC = 100°C
54
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
210
A
A
45
EAS
101
mJ
TC = 25°C
104
Power Dissipation (4)
PD
W
TC = 100°C
42
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
25
10
8
ID = 20A
VDS = 50V
D = 13A
20
15
10
5
I
6
4
2
0
0
0
10
20
30
40
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 3.3
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