JMSL1004BG
100V 3.4m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
1.7
117
3.4
4.3
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN5x6-8L
Top View
Pin Configuration
Top View
Bottom View
D
S
1
2
3
4
8
7
6
G
5
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL1004BG-13
PDFN5x6-8L
8
SL1004B
1
-55 to 150
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
100
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS
±20
V
TC = 25°C
117
Continuous Drain
Current (1)
ID
A
TC = 100°C
74
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
420
A
A
64
EAS
205
mJ
TC = 25°C
104
Power Dissipation (4)
PD
W
TC = 100°C
42
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
VDS = 50V
D = 20A
ID = 20A
16
12
8
I
6
4
2
4
0
0
0
20
40
Qg (nC)
60
80
2
4
6
8
10
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.4
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