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JMSL1004BG PDF预览

JMSL1004BG

更新时间: 2024-11-23 14:52:43
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5页 325K
描述
中压 N-ch (40V ~ 400V)

JMSL1004BG 数据手册

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JMSL1004BG  
100V 3.4mN-Ch Power MOSFET  
Product Summary  
Features  
Parameter  
VDS  
Value  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
100  
1.7  
117  
3.4  
4.3  
VGS(th)_Typ  
ID (@ VGS = 10V) (1)  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
A
RDS(ON)_Typ (@ VGS = 10V)  
RDS(ON)_Typ (@ VGS = 4.5V)  
m  
m  
Halogen-free and RoHS-compliant  
Applications  
Power Managerment in Telecom., Industrial Automation, CE  
Motor Driving in Power Tool, E-vehicle, Robotics  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
PDFN5x6-8L  
Top View  
Pin Configuration  
Top View  
Bottom View  
D
S
1
2
3
4
8
7
6
G
5
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMSL1004BG-13  
PDFN5x6-8L  
8
SL1004B  
1
-55 to 150  
13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
100  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
VGS  
±20  
V
TC = 25°C  
117  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
74  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
420  
A
A
64  
EAS  
205  
mJ  
TC = 25°C  
104  
Power Dissipation (4)  
PD  
W
TC = 100°C  
42  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
20  
10  
8
VDS = 50V  
D = 20A  
ID = 20A  
16  
12  
8
I
6
4
2
4
0
0
0
20  
40  
Qg (nC)  
60  
80  
2
4
6
8
10  
VGS (V)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.4  
Page 1 of 5  

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