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JMSL1003AG PDF预览

JMSL1003AG

更新时间: 2023-12-06 20:08:57
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页数 文件大小 规格书
5页 327K
描述
中压 N-ch (40V ~ 400V)

JMSL1003AG 数据手册

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JMSL1003AG  
100V 2.8mN-Ch Power MOSFET  
Product Summary  
Features  
Parameter  
VDS  
Typ.  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
100  
1.6  
135  
2.8  
3.4  
VGS(th)  
ID (@ VGS = 10V) (1)  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
A
RDS(ON) (@ VGS = 10V)  
m  
m  
RDS(ON) (@ VGS = 4.5V)  
Halogen-free and RoHS-compliant  
Applications  
Power Managerment in Telecom., Industrial Automation, CE  
Current Switching in DC/DC & AC/DC Sub-systems  
Motor Driving in Power Tool, E-vehicle, Robotics  
PDFN5x6-8L  
Top View  
Pin Configuration  
Top View  
Bottom View  
D
S
1
8
7
6
5
2
3
G
4
Ordering Information  
Device  
TJ (°C)  
-55 to 150 13-inch Reel  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMSL1003AG-13  
PDFN5x6-8L  
8
SL1003A  
1
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
±20  
VGS  
V
TC = 25°C  
135  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
85  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
483  
A
A
72  
EAS  
259  
mJ  
TC = 25°C  
114  
Power Dissipation (4)  
PD  
W
TC = 100°C  
45  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
20  
10  
8
VDS = 50V  
D = 20A  
ID = 20A  
16  
12  
8
I
6
4
2
4
0
0
0
20  
40  
Qg (nC)  
60  
80  
2
4
6
8
10  
VGS (V)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.3  
Page 1 of 5  

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