Datasheet > JMSL0611PGD

JMSL0611PGD

更新时间： 2025-08-26 19:53:51

品牌	Logo	应用领域
捷捷微 - JJM		光电二极管
页数	文件大小	规格书
7页	1307K
描述
JJM Package:PDFN5x6-8L-D; Confi- guration:N+N; Status:Active; VDSMax (V):60; IDMax (A):31; VGS(th)

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中文翻译

获取价格

数据手册

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JMSL0611PGD 数据手册

60V, 31A, 13.7mΩ Dual N-channel Power SGT MOSFET

JMSL0611PGD

Product Summary

Features



Excellent R_DS(ON)and Low Gate Charge

100% UIS Tested

Parameters

V_DSS

Value

Unit

100% ΔVds Tested

V_{GS(th)_Typ}

1.6

Halogen-free; RoHS-compliant

I_D(@V_GS=10V)

R_{DS(ON)_Typ}(@V_GS=10V

R_{DS(ON)_Typ}(@V_GS=4.5V

10.7

13.7

Applications



Load Switch

PWM Application

Power Management

PDFN5X6-8L-D

Schematic Diagram

Pin Assignment

Ordering Information

Device

Per Carton

Package

Marking

MSL

Form

Reel(pcs)

(pcs)

JMSL0611PGD

PDFN5x6-8L-D

L0611PD

Tape&Reel

5000

50000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Unit

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

T_C= 25°C

I_D

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

T_C= 100°C

I_DM

Refer to Fig.4

Single Pulsed Avalanche Energy ⁽²⁾

T_C= 25°C

T_C= 100°C

Junction & Storage Temperature Range

E_AS

P_D

Power Dissipation

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient⁽³⁾

Max

Symbol

Unit

R_θJA

°C/W

R_θJC

Thermal Resistance, Junction to Case

5.6

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REV 1.0 | 1/7

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中文翻译

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