JMSL0401BG
40V 0.85mΩ N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
40
1.5
Low Gate Charge
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
243
0.85
1.2
A
RDS(ON)_Typ (@ VGS = 10V)
mΩ
mΩ
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
8
2
7
6
G
3
4
5
Ordering Information
Device
TJ (°C)
-55 to 150
Package
PDFN5x6-8L
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0401BG-13
8
SL0401B
1
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
40
±20
VGS
V
TC = 25°C
243
Continuous Drain
Current (1)
ID
A
TC = 100°C
153
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
886
A
A
46
EAS
317
mJ
TC = 25°C
96
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
38
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
3.0
2.5
2.0
1.5
1.0
0.5
VDS = 20V
ID = 20A
ID = 20A
6
4
2
0
0
20
40
60
80
100
2
4
6
8
10
12
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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