JMSL0315AUD
30V 8.8m Dual N-Ch Power MOSFET
Product Summary
Features
Parameter
Value
30
Unit
V
•
•
•
•
Low RDS(ON)
100% UIS Tested, 100% Rg Tested
VDS
VGS(th)_Typ
ID (@ VGS = 10V) (1)
1.7
V
36
A
Pb-free Lead Plating
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
8.8
m
m
Halogen-free and RoHS-compliant
12.4
Applications
•
•
•
•
Power Mgmt. in Computing, CE, Digital Lifestyle, IE 4.0, Communications
Current Switching in DC/DC (H-bridge, Buck/Boost) & AC/DC (Inverting, SR)
Load Switching over VBUS in Fast Charger, Half-bridging in Wireless Charger
Motor Driving in Home Appliance, Robotics, Ventilation
PDFN3x3-8L-D
Pin Configuration
Chip-1 & Chip-2
D1
Top View
Bottom View
Top View
D2
S2
G1
G2
S1
Ordering Information
Device
TJ (°C)
Package
PDFN3x3-8L-D
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0315AUD-13
8
L0315AD
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
VGS
V
TC = 25°C
36
Continuous Drain
Current (1)
ID
A
T
C = 100°C
23
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
131
A
A
13.0
8.5
EAS
mJ
TC = 25°C
23
Power Dissipation (4)
PD
W
TC = 100°C
9.1
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
ID = 15A
VDS = 15V
D = 15A
I
6
4
2
0
0
2
4
6
8
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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