JMSL0310AU
30V 4.0m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
30
1.7
60
VGS(th)_Typ
V
D (@ VGS = 10V) (1)
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
RDS(ON)_Typ (@ VGS = 10V)
4.0
6.0
m
m
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving, Quick/Wireless Charging
PDFN3x3-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
4
8
7
6
5
G
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0310AU-13
PDFN3x3-8L
8
SL0310A
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
60
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
38
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
175
20
A
A
EAS
20
mJ
TC = 25°C
28
Power Dissipation (4)
PD
W
TC = 100°C
11
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
ID = 15A
VDS = 15V
D = 15A
16
12
8
I
6
4
2
4
0
0
0
3
6
9
12
15
2
4
6
8
10
12
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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