JMSL030SAG
30V 0.55m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
30
VGS(th)_Typ
ID (@ VGS = 10V) (1)
1.5
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
327
0.55
0.80
A
RDS(ON)_Typ (@ VGS = 10V)
m
m
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving, Quick/Wireless Charging
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
4
8
7
6
5
G
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL030SAG-13
PDFN5x6-8L
8
SL030SA
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
30
+20 / -16
327
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
207
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
810
A
A
37
EAS
342
mJ
TC = 25°C
104
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
42
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
3
2.5
2
10
8
ID = 20A
VDS = 15V
D = 20A
I
6
1.5
1
4
2
0.5
0
0
2
4
6
8
10
12
0
30
60
90
Qg (nC)
120
150
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.1
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