JMSL0307AV
30V 3.7m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
30
1.6
29
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
3.7
5.3
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving, Quick/Wireless Charging
U-DFN2020-6L
Top View
Pin Configuration
D
S
Top View
Bottom View
G
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0307AV-7
U-DFN2020-6L
6
BP
1
-55 to 150
7-inch Reel
3000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
29
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
T
C = 100°C
18
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
116
20
A
A
EAS
20
mJ
TC = 25°C
6.3
Power Dissipation (4)
PD
W
TC = 100°C
2.5
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
16
12
8
10
8
VDS = 15V
D = 15A
ID = 15A
I
6
4
4
2
0
0
2
4
6
8
10
12
0
3
6
9
12
15
Qg (nC)
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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