Datasheet > JMSL0302DG

JMSL0302DG

更新时间： 2024-11-19 14:54:47

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	380K
描述
低压 N-ch (≤ 30V )

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中文翻译

获取价格

数据手册

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JMSL0302DG 数据手册

JMSL0302DG

30V 1.3m N-Ch Power MOSFET

Features

Product Summary

•

Ultra-low ON-resistance, R_DS(ON)

Parameter

Typ.

Unit

V_DS

1.7

174

1.3

2.3

Enhanced ESD @ HBM Rating up to 1.0kV

V_GS(th)

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS and R_gTested

Pb-free Lead Plating

R_DS(ON)(@ V_GS= 10V)

m

Halogen-free and RoHS-compliant

R_DS(ON)(@ V_GS= 4.5V)

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC Sub-systems

Motor Driving, Quick/Wireless Charging

PDFN5x6-8L

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

PDFN5x6-8L

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL0302DG-13

SL0302D

-55 to 150 13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

V_GS

T_C= 25°C

174

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

109

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

696

E_AS

118

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 15V

_D= 20A

I_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 6

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中文翻译

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