Datasheet > JMSL0302BU

JMSL0302BU

更新时间： 2024-11-19 14:55:59

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	336K
描述
低压 N-ch (≤ 30V )

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中文翻译

获取价格

数据手册

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JMSL0302BU 数据手册

JMSL0302BU

30V 1.5m N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

1.6

135

1.5

2.2

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

m

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC Sub-systems

Motor Driving, Quick/Wireless Charging

PDFN3x3-8L

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

PDFN3x3-8L

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL0302BU-13

SL0302B

-55 to 150 13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

135

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

540

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 15V

_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.4

Page 1 of 5

12 3 4 5

中文翻译

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