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JMSL0302BG PDF预览

JMSL0302BG

更新时间: 2024-11-06 14:56:03
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描述
低压 N-ch (≤ 30V )

JMSL0302BG 数据手册

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JMSL0302BG  
30V 1.5mN-Ch Power MOSFET  
Product Summary  
Features  
Parameter  
VDS  
Value  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
30  
1.6  
152  
1.5  
2.1  
VGS(th)_Typ  
ID (@ VGS = 10V) (1)  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
A
RDS(ON)_Typ (@ VGS = 10V)  
m  
m  
RDS(ON)_Typ (@ VGS = 4.5V)  
Halogen-free and RoHS-compliant  
Applications  
Power Management in Computing, CE, IE 4.0, Communications  
Current Switching in DC/DC & AC/DC Sub-systems  
Motor Driving, Quick/Wireless Charging  
PDFN5x6-8L  
Pin Configuration  
Top View  
Top View  
Bottom View  
D
S
1
8
2
3
4
7
6
5
G
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMSL0302BG-13  
PDFN5x6-8L  
8
SL0302B  
1
-55 to 150 13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±20  
152  
96  
VGS  
V
TC = 25°C  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
560  
25  
A
A
EAS  
94  
mJ  
TC = 25°C  
69  
Power Dissipation (4)  
PD  
W
TC = 100°C  
28  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
10  
8
ID = 20A  
VDS = 15V  
D = 20A  
I
6
4
2
0
0
8
16  
24  
Qg (nC)  
32  
40  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.5  
Page 1 of 5  

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