Datasheet > JMSL0302AU

JMSL0302AU

更新时间： 2023-12-06 20:03:58

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	298K
描述
低压 N-ch (≤ 30V )

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JMSL0302AU 数据手册

JMSL0302AU

30V 1.2m N-Ch Power MOSFET

Product Summary

Features

Parameter

Value

Unit

•

Ultra-low R_DS(ON)

ESD Enhanced to HBM Rating up to 1.0kV

V_DS

1.7

145

1.2

2.0

V_{GS(th)_Typ}

_D(@ V_GS= 10V) ⁽¹⁾

R_{DS(ON)_Typ}(@ V_GS= 10V)

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

m

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC Sub-systems

Motor Driving, Quick/Wireless Charging

PDFN3x3-8L

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

-55 to 150 13-inch Reel

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL0302AU-13

PDFN3x3-8L

L0302A

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

V_GS

T_C= 25°C

145

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

450

E_AS

101

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 15V

_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 3.3

Page 1 of 5

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