JMSH1018PC(E)
100V 15.4mW N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
100
3.1
Unit
V
•
Ultra-low RDS(ON)
Ultra-low RDS(ON)
•
•
Low Gate Charge
Low Gate Charge
•
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
•
100% UIS Tested, 100% Rg Tested
100% UIS Tested, 100% Rg Tested
•
54
A
•
Pb-free Lead Plating
Pb-free Lead Plating
RDS(ON)_Typ (@ VGS = 10V)
15.4
m
W
•
•
Halogen-free and RoHS-compliant
Halogen-free and RoHS-compliant
•
Applications
•
•
•
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TO-220-3L Top View
TO-263-3L Top View
D
D
G
G
D
S
G
S
S
Ordering Information
Device
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1018P
SH1018P
MSL
NA
3
TJ (°C)
Media
Tube
Quantity (pcs)
JMSH1018PC
3
3
-55 to 150
-55 to 150
50
JMSH1018PE
13-inch Reel
800
(@ TA = 25°C unless otherwise specified)
Absolute Maximum Ratings
Parameter
Symbol
VDS
Value
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
54
Continuous Drain
Current (1)
ID
A
TC = 100°C
37
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
216
A
EAS
25
mJ
TC = 25°C
104
(4)
PD
W
Power Dissipation
TC = 100°C
41
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
VDS = 50V
ID = 20A
ID = 20A
Jiangsu JieJie Microelectronics Co., Ltd.
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Rev. 1.0
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