JMSH1018AGQ
100V 15.8m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
100
2.7
Unit
V
•
•
•
•
•
•
Low ON-resistance, RDS(ON)
Low Gate Charge, Qg
100% UIS and Rg Tested
Pb-free Lead Plating
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
45
A
RDS(ON)_Typ (@ VGS = 10V)
15.8
m
Halogen-free and RoHS-compliant
AEC-Q101 Qualified for Automotive Applications
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
4
8
7
6
G
5
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1018AGQ-13
PDFN5x6-8L
8
SH1018AQ
1
-55 to 175 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
45
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
32
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
181
28
A
A
EAS
39
mJ
TC = 25°C
88
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
44
TJ, TSTG
-55 to 175
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
ID = 20A
VDS = 50V
ID = 20A
6
4
2
0
2
4
6
8
10
12
0
3
6
9
12
15
Qg (nC)
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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