JMSH1018AG
100V 15.8m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
3.2
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
33
A
RDS(ON)_Typ (@ VGS = 10V)
15.8
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
4
8
7
6
5
G
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1018AG-13
PDFN5x6-8L
8
SH1018A
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
33
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
T
C = 100°C
21
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
196
28
A
A
EAS
39
mJ
TC = 25°C
43
Power Dissipation (4)
PD
W
TC = 100°C
17
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
VDS = 50V
D = 20A
ID = 20A
I
6
4
2
0
2
4
6
8
10
12
0
3
6
9
12
15
Qg (nC)
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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