JMSH1018AC
JMSH1018AE
100V 15.5m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
100
3.2
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
63
A
RDS(ON)_Typ (@ VGS = 10V)
15.5
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
D
G
G
D
S
G
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1018A
SH1018A
MSL
NA
1
Media
Tube
Quantity (pcs)
JMSH1018AC-U
JMSH1018AE-13
3
3
-55 to 150
-55 to 150
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
63
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
40
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
196
28
A
A
EAS
39
mJ
TC = 25°C
152
61
Power Dissipation (4)
PD
W
T
C = 100°C
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
VDS = 50V
ID = 20A
ID = 20A
6
4
2
0
2
4
6
8
10
12
0
3
6
9
12
15
Qg (nC)
VGS (V)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
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