Datasheet > JMSH1010AGQ

JMSH1010AGQ

更新时间： 2023-12-06 20:11:37

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	400K
描述
汽车 MOSFET

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JMSH1010AGQ 数据手册

JMSH1010AGQ

100V 8.8m N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

100

2.7

Unit

•

Ultra‐low ON-resistance, R_DS(ON)

Low Gate Charge, Q_g

V_{GS(th)_Typ}

_D(@ V_GS= 10V) ⁽¹⁾

100% UIS and R_gTested

R_{DS(ON)_Typ}(@ V_GS= 10V)

Pb-free Lead Plating

8.8

m

Halogen-free and RoHS-compliant

AEC-Q101 Qualified for Automotive Applications

PDFN5x6-8L

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSH1010AGQ-13

PDFN5x6-8L

SH1010AQ

-55 to 175

13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

255

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 175

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 50V

I_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 6

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