Datasheet > JMSH1010AE

JMSH1010AE

更新时间： 2023-12-06 20:09:10

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	327K
描述
中压 N-ch (40V ~ 400V)

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数据手册

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JMSH1010AE 数据手册

JMSH1010AC

JMSH1010AE

100V 9.4m N-Ch Power MOSFET

Product Summary

Features

Parameter

V_DS

Typ.

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

100

2.7

V_GS(th)

_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

R_DS(ON)(@ V_GS= 10V)

9.4

m

Halogen-free and RoHS-compliant

Applications

•

Power Managerment in Telecom., Industrial Automation, CE

Motor Driving in Power Tool, E-vehicle, Robotics

Current Switching in DC/DC & AC/DC (SR) Sub-systems

TO-220-3L Top View

TO-263-3L Top View

Ordering Information

Device

T_J(°C)

-55 to 150

Package

TO-220-3L

TO-263-3L

# of Pins

Marking

SH1010A

MSL

N/A

Media

Quantity (pcs)

JMSH1010AC-U

JMSH1010AE-13

Tube

-55 to 150 13-inch Reel

800

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

176

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 50V

_D= 20A

I_D= 20A

Q_g(nC)

V_GS(V)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.4

Page 1 of 5

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