Datasheet > JMSH1004RG

JMSH1004RG

更新时间： 2025-07-18 19:53:51

品牌	Logo	应用领域
捷捷微 - JJM		GSM 光电二极管
页数	文件大小	规格书
7页	1205K
描述
JJM Package:PDFN5x6-8L; Confi- guration:N; Status:Active; VDSMax (V):100; IDMax (A):117; VGS(th)Typ (V):3; RDS(ON)Typ @ VGS 10V (mÎ©):4.6; RDS(ON)Max @ VGS 10V (mÎ©):5.9; VGSMax (V):±20; EASMax (mJ):497; CissTyp (pF):4641; CossTyp (pF):612; CrssTyp (pF):17; QgTyp (nC):67; With ESD:No; FOM:308;

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数据手册

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JMSH1004RG 数据手册

100V, 117A, 4.6mΩ N-channel Power SGT MOSFET

JMSH1004RG

Product Summary

Features



Excellent R_DS(ON)and Low Gate Charge

100% UIS Tested

Parameters

V_DSS

Value

100

3.0

Unit

100% ΔVds Tested

V_{GS(th)_Typ}

Halogen-free; RoHS-compliant

I_D(@V_GS=10V)

R_{DS(ON)_Typ}(@V_GS=10V

117

4.6

Applications



Load Switch

PWM Application

Power Management

PDFN5X6-8L

Schematic Diagram

Pin Assignment

Ordering Information

Device

Per Carton

Package

Marking

MSL

Form

Reel(pcs)

(pcs)

JMSH1004RG

PDFN5x6-8L

SH1004R

Tape&Reel

5000

50000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Unit

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

T_C= 25°C

117

I_D

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

T_C= 100°C

I_DM

Refer to Fig.4

497

Single Pulsed Avalanche Energy ⁽²⁾

T_C= 25°C

T_C= 100°C

Junction & Storage Temperature Range

E_AS

156

P_D

Power Dissipation

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient⁽³⁾

Max

Symbol

Unit

R_θJA

°C/W

R_θJC

Thermal Resistance, Junction to Case

0.8

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