JMSH1001NS
100V 1.9m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
3.0
308
1.9
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Power Management in Telecom., Industrial Automation, CE
TO-247-3L Top View
TO-247-3L Bottom View
2. Drain
1. Gate
3.Source
Ordering Information
Device
TJ (°C)
-55 to 150
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1001NS-U
TO-247-3L
3
SH1001N
NA
Tube
30
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
308
Continuous Drain
Current (1)
ID
A
TC = 100°C
195
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
537
A
EAS
1838
367
mJ
TC = 25°C
Power Dissipation (4)
PD
W
TC = 100°C
147
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
ID = 20A
VDS = 50V
D = 20A
I
15
10
5
6
4
2
0
0
0
5
10
15
20
0
50
100
150
200
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
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Rev. 2.0
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