JMSH0406BUQ
40V 4.8mΩ N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
40
Unit
V
•
•
•
•
•
•
Ultra-low ON-resistance, RDS(ON)
Low Gate Charge, Qg
VGS(th)_Typ
ID (@ VGS = 10V) (1)
2.8
V
100% UIS and Rg Tested
Pb-free Lead Plating
59
A
RDS(ON)_Typ (@ VGS = 10V)
4.8
mΩ
Halogen-free and RoHS-compliant
AEC-Q101 Qualified for Automotive Applications
PDFN3x3-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
8
7
6
5
2
3
G
4
Ordering Information
Device
TJ (°C)
-55 to 175
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0406BUQ-13
PDFN3x3-8L
8
SH0406BQ
1
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
40
±20
VGS
V
TC = 25°C
59
Continuous Drain
Current (1)
ID
A
TC = 100°C
42
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
235
A
EAS
96
mJ
TC = 25°C
37
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
18.3
-55 to 175
TJ, TSTG
°C
RDS(ON) vs. VGS
Gate Charge
10
8
10
ID = 20A
VDS = 20V
ID = 20A
8
6
4
2
0
6
4
2
0
5
10
15
20
0
4
8
12
16
Qg (nC)
VGS (V)
Jiangsu JieJie Microelectronics Co., Ltd.
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Rev. 1.1
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