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JMPL1050AU PDF预览

JMPL1050AU

更新时间: 2023-12-06 19:46:47
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 376K
描述
中压 P-ch (-100V ~ -40V)

JMPL1050AU 数据手册

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JMPL1050AU  
-100V 38mP-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
Value  
Unit  
V
Low On-Resistance  
Excellent Gate Charge x RDS(ON) Product (FOM)  
VDS  
-100  
-2.0  
-26  
38  
VGS(th)_Typ  
D (@ VGS = -10V) (1)  
RDS(ON)_Typ (@ VGS = -10V)  
V
Pb-Free Lead Plating  
I
A
RoHS and Halogen-Free Compliant  
100% UIS Tested, 100% Rg Tested  
m  
m  
RDS(ON)_Typ (@ VGS = -4.5V)  
51  
Applications  
Battery Management  
DC/DC in Telecoms and Inductrial  
Hard Switching and High Speed Circuit  
PDFN3x3-8L  
Top View  
Pin Configuration  
Top View  
Bottom View  
D
S
1
2
3
4
8
7
6
5
G
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
1
Media  
Quantity (pcs)  
JMPL1050AU-13  
PDFN3x3-8L  
8
PL1050A  
-55 to 150  
13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
-100  
±20  
VGS  
V
TC = 25°C  
-26  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
-16  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
-77  
A
A
-27  
EAS  
109  
mJ  
TC = 25°C  
69  
Power Dissipation (4)  
PD  
W
TC = 100°C  
28  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
10  
8
VDS = -50V  
ID = -15A  
ID = -15A  
6
4
2
0
0
5
10  
15  
Qg (nC)  
20  
25  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.2  
Page 1 of 6  

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