JMPL1050AU
-100V 38m P-Ch Power MOSFET
Features
Product Summary
Parameter
Value
Unit
V
•
•
•
•
•
Low On-Resistance
Excellent Gate Charge x RDS(ON) Product (FOM)
VDS
-100
-2.0
-26
38
VGS(th)_Typ
D (@ VGS = -10V) (1)
RDS(ON)_Typ (@ VGS = -10V)
V
Pb-Free Lead Plating
I
A
RoHS and Halogen-Free Compliant
100% UIS Tested, 100% Rg Tested
m
m
RDS(ON)_Typ (@ VGS = -4.5V)
51
Applications
•
•
•
Battery Management
DC/DC in Telecoms and Inductrial
Hard Switching and High Speed Circuit
PDFN3x3-8L
Top View
Pin Configuration
Top View
Bottom View
D
S
1
2
3
4
8
7
6
5
G
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
1
Media
Quantity (pcs)
JMPL1050AU-13
PDFN3x3-8L
8
PL1050A
-55 to 150
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
-100
±20
VGS
V
TC = 25°C
-26
Continuous Drain
Current (1)
ID
A
TC = 100°C
-16
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
-77
A
A
-27
EAS
109
mJ
TC = 25°C
69
Power Dissipation (4)
PD
W
TC = 100°C
28
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
150
120
90
60
30
0
10
8
VDS = -50V
ID = -15A
ID = -15A
6
4
2
0
0
5
10
-VGS (V)
15
20
0
5
10
15
Qg (nC)
20
25
JieJie Microelectronics Co., Ltd.
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Rev. 1.2
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