JMPK4N60BJ
Description
JMP N-channel Enhancement Mode Power MOSFET
Features
Applications
600V, 4A
Load Switch
RDS(ON) < 2.52Ω @ VGS = 10V
PWM Application
Fast Switching
Power Management
Improved dv/dt Capability
100% UIS TESTED!
100% ΔVds TESTED!
D
S
G
Marking and Pin Assignment
TO-252-3L(DPAK) Top
Schematic Diagram
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size Reel(pcs)
13" 2500
(pcs)
JMPK4N60BJ
JMPK4N60BJ
TO-252-3L
TAPING
25000
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
600
±30
4
V
V
TC = 25°C
ID
Continuous Drain Current
A
TC = 100°C
3
Pulsed Drain Current (1)
Single Pulsed Avalanche Energy (2)
IDM
EAS
16
A
mJ
W
134
104
32.8
1.2
PD
Power Dissipation
TC = 25°C
Thermal Resistance, Junction to Ambient(3)
Thermal Resistance, Junction to Case
Junction & Storage Temperature Range
RθJA
RθJC
TJ, TSTG
°C/W
°C
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.0