Datasheet > JMPK2N65G1

JMPK2N65G1

更新时间： 2023-12-06 20:08:55

品牌	Logo	应用领域
捷捷微 - JJM		高压
页数	文件大小	规格书
7页	530K
描述
高压 MOSFET (≥ 400V)

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数据手册

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JMPK2N65G1 数据手册

JMPK2N65G1

Description

JMP N-channel Enhancement Mode Power MOSFET

Features

Application

 650V, 2A

 Load Switch

 PWM Application

R_DS(ON)< 5.5Ω @ V_GS= 10V

 Fast Switching

 Power management

 Improved dv/dt Capability

100% UIS TESTED!

100% ΔVds TESTED!

TO-252-4R (DPAK) top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

Size

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

JMPK2N65G1

TAPING

TO-252-4R

13inch

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

V_DSS

Parameter

Drain-Source Voltage

Max.

Units

650

V_GSS

Gate-Source Voltage

±30

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

1.3

I_DM

E_AS

P_D

Single Pulsed Avalanche Energy ^note2

Power Dissipation

T_C= 25℃

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.6

℃/W

℃

62.5

T_J, T_STGOperating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

12 3 4 5 6 7

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