Datasheet > JMH70R430AK

JMH70R430AK

更新时间： 2024-11-04 14:55:19

品牌	Logo	应用领域
捷捷微 - JJM		高压
页数	文件大小	规格书
6页	368K
描述
高压 MOSFET (≥ 400V)

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中文翻译

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数据手册

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JMH70R430AK 数据手册

JMH70R430AK

700V 352m N-Ch Power MOSFET

Features

Product Summary

Parameter

Value

700

3.5

Unit

•

Extremely Low Gate Charge

Excellent Output Capacitance (C_oss) Profile

V_DS

V_{GS(th)_Typ}

_D(@ V_GS= 10V) ⁽¹⁾

R_{DS(ON)_Typ}(@ V_GS= 10V)

Fast Switching Capability

100% UIS Tested, 100% Rg Tested

Pb-free Lead Plating

352

3.6

m

J

E_oss@400V

Halogen-free and RoHS-compliant

Applications

•

Telecom / Server Power Supplies

Industrial Power Supplies

UPS / Solar

Lighting / Charger / Adapter

TO-252-3L Top View

Ordering Information

Device

T_J(°C)

Package

TO-252-3L

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMH70R430AK-13

H70R430A

-55 to 150

13-inch Reel

2500

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

700

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±30

T_C= 25°C

12.0

7.0

Continuous Drain

Current ⁽¹⁾

I_D

_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

E_AS

180

T_C= 25°C

181

Power Dissipation ⁽⁴⁾

P_D

_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

_DS(ON)vs. V_GS

Gate Charge

1600

1200

800

400

I_D= 5A

V_DS= 350V

I_D= 5A

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

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