Datasheet > JMH70R430AF

JMH70R430AF

更新时间： 2024-11-04 14:54:27

品牌	Logo	应用领域
捷捷微 - JJM		高压
页数	文件大小	规格书
6页	1111K
描述
高压 MOSFET (≥ 400V)

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中文翻译

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数据手册

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JMH70R430AF 数据手册

JMH70R430AF

700V 350mW N-Ch Power MOSFET

Features

Product Summary

Parameter

Value

700

3.5

Unit

•

Extremely Low Gate Charge

Excellent Output Capacitance (C_oss) Profile

V_DS

V_{GS(th)_Typ}

Fast Switching Capability

I_D(@ V_GS= 10V) ⁽¹⁾

R_{DS(ON)_Typ}(@ V_GS= 10V)

E_oss@400V

100% UIS Tested, 100% Rg Tested

Pb-free Lead Plating

350

3.6

Halogen-free and RoHS-compliant

Applications

•

Telecom / Server Power Supplies

Industrial Power Supplies

UPS / Solar

Lighting / Charger / Adapter

TO-220FP-3L

Bottom View

Top View

Ordering Information

Device

Package

# of Pins

Marking

H70R430A

MSL

T_J(°C)

-55 to 150

Media

Quantity (pcs)

JMH65R430AF-U

TO-220FP-3L

Tube

(@ T = 25°C unless otherwise specified)

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Value

700

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±30

T_C= 25°C

11.2

3.0

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

E_AS

180

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 5A

V_DS= 350V

I_D= 5A

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 6

12 3 4 5 6

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