Datasheet > JMH65R640AK

JMH65R640AK

更新时间： 2025-08-26 19:53:51

品牌	Logo	应用领域
捷捷微 - JJM		GSM
页数	文件大小	规格书
6页	1100K
描述
JJM Package:TO-252-3L; Confi- guration:N; Status:Active; VDSMax (V):650; IDMax (A):9; VGS(th)Typ (V):3.1; RDS(ON)Typ @ VGS 10V (mÎ©):578; RDS(ON)Max @ VGS 10V (mÎ©):650; VGSMax (V):±20; EASMax (mJ):120; CissTyp (pF):479; CossTyp (pF):20.9; CrssTyp (pF):5; QgTyp (nC):13; With ESD:NO; FOM:7514;

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数据手册

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JMH65R640AK 数据手册

650V, 9A, 578mΩ N-channel Power Super Junction MOSFET

JMH65R640AK

Product Summary

Features



Excellent R_DS(ON)and Low Gate Charge

100% UIS TESTED

Parameters

V_DSS

Value

650

3.1

Unit

100% ΔVds TESTED

V_{GS(th)_Typ}

Halogen-free; RoHS-compliant

Pb-free plating

I_D(@V_GS=10V)

R_{DS(ON)_Typ}(@V_GS=10V

578

Applications



Load Switch

PWM Application

Power Management

Schematic Diagram

TO-252-3L

Pin Assignment

Ordering Information

Per Carton

Device

Package

Marking

MSL

Form

Reel(pcs)

(pcs)

JMH65R640AK

TO-252-3L

H65R640A

Tape&Reel

2500

25000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Unit

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

650

±30

T_C= 25°C

I_D

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

T_C= 100°C

Refer to Fig.4

120

I_DM

Single Pulsed Avalanche Energy ⁽²⁾

T_C= 25°C

T_C= 100°C

Junction & Storage Temperature Range

E_AS

P_D

Power Dissipation

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient⁽³⁾

Max

Symbol

Unit

R_θJA

°C/W

R_θJC

Thermal Resistance, Junction to Case

2.7

All product information is copyrighted and subject to legal disclaimers.

REV 1.0 | 1/6

12 3 4 5 6

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