Datasheet > JMH65R430AKQ

JMH65R430AKQ

更新时间： 2024-11-04 14:55:47

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	359K
描述
汽车 MOSFET

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JMH65R430AKQ 数据手册

JMH65R430AKQ

650V SuperJunction Power MOSFET

Features

Product Summary

Parameter

Value

650

3.5

Unit

•

Extremely Low Gate Charge

Excellent Output Capacitance (C_oss) Profile

V_DS

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

Fast Switching Capability

11.2

370

2.2

Ultra Fast Body Diode

R_{DS(ON)_Typ}(@ V_GS= 10V)

m

J

_oss@400V

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

Halogen-free and RoHS-compliant

AEC-Q101 Qualified for Automotive Applications

Applications

•

Unidirectional and bidirectional DC-DC converters

On-Board battery Chargers

TO-252-3L Top View

Ordering Information

Device

T_J(°C)

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMH65R430AKQ-13

TO-252-3L

65R430AQ

-55 to 150

13-inch Reel

2500

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

650

±30

11.2

7.1

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_D

T_C= 100°C

I_DM

I_AS

6.0

180

145

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

2000

1600

1200

800

400

V_DS= 325V

I_D= 5A

Q_g(nC)

V_GS(V)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 6

12 3 4 5 6

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