JMH65R290AE
650V SuperJunction Power MOSFET
Features
Product Summary
Parameter
Value
650
Unit
V
•
•
•
•
•
•
Extremely Low Gate Charge
Excellent Output Capacitance (Coss) Profile
VDS
VGS(th)_Typ
ID (@ VGS = 10V) (1)
3.5
V
Fast Switching Capability
12.0
259
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
RDS(ON)_Typ (@ VGS = 10V)
m
J
Eoss@400V
4.59
Halogen-free and RoHS-compliant
Applications
•
•
•
•
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
Lighting / Charger / Adapter
TO-263-3L Top View
D
D
S
G
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMH65R290AE-13
TO-263-3L
3
H65R290A
1
-55 to 150
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
650
±25
12.0
8.0
48
VGS
V
TC = 25°C
Continuous Drain
Current (1)
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
ID
A
TC = 100°C
IDM
IAS
A
A
7.5
281
31
EAS
mJ
TC = 25°C
Power Dissipation (4)
PD
W
TC = 100°C
13
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
1
0.8
0.6
0.4
0.2
0
VDS = 10V
D = 7.5A
ID = 7.5A
I
6
4
2
0
0
5
10
15
Qg (nC)
20
25
0
5
10
15
20
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev 1.0
Page 1 of 5