JMH65R290ACFP
650V SuperJunction Power MOSFET
Features
Product Summary
Parameter
•
•
•
•
•
•
Extremely Low Gate Charge
Excellent Output Capacitance (Coss) Profile
Value
650
Unit
V
VDS
VGS(th)_Typ
3.5
V
Fast Switching Capability
ID (@ VGS = 10V) (1)
RDS(ON)_Typ (@ VGS = 10V)
Eoss@400V
12.0
260
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
m
J
4.59
Halogen-free and RoHS-compliant
Applications
•
•
•
•
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
Lighting / Charger / Adapter
TO-220FP-NL
Bottom View
Top View
D
S
G
S
D
G
D
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMH65R290ACFP-U
TO-220FP-NL
3
H65R290A
NA
-55 to 150
Tube
50
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
650
±25
VGS
V
TC = 25°C
12.0
8.0
Continuous Drain
Current (1)
ID
A
T
C = 100°C
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
48
A
A
7.5
EAS
281
mJ
TC = 25°C
31
Power Dissipation (4)
PD
W
T
C = 100°C
13
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
1
0.8
0.6
0.4
0.2
0
VDS = 10V
ID = 7.5A
ID = 7.5A
6
4
2
0
0
5
10
15
20
25
0
5
10
15
20
Qg (nC)
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev 2.1
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