Datasheet > JMH65R190AW

JMH65R190AW

更新时间： 2023-12-06 20:03:54

品牌	Logo	应用领域
捷捷微 - JJM		高压
页数	文件大小	规格书
6页	323K
描述
高压 MOSFET (≥ 400V)

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JMH65R190AW 数据手册

JMH65R190AW

650V SuperJunction Power MOSFET

Features

Product Summary

Parameter

Value

650

3.5

Unit

•

Extremely Low Gate Charge

Excellent Output Capacitance (C_oss) Profile

V_DS

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

R_{DS(ON)_Typ}(@ V_GS= 10V)

E_oss@400V

Fast Switching Capability

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

170

5.2

m

J

Halogen-free and RoHS-compliant

Applications

•

Telecom / Server Power Supplies

Industrial Power Supplies

UPS / Solar

Lighting / Charger / Adapter

TO-262-3L

Top View

Ordering Information

Device

T_J(°C)

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMH65R190AW-U

TO-262-3L

H65R190A

-55 to 150

Tube

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

650

±30

V_GS

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

12.1

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

9.0

E_AS

405

T_C= 25°C

189

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

1000

800

600

400

200

V_DS= 325V

I_D= 10A

Q_g(nC)

V_GS(V)

JieJie Microelectronics Co., Ltd.

Rev. 1.0

Page 1 of 6

All product information are copyrighted and subject to legal disclaimers

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