Datasheet > JMCL0410AGD

JMCL0410AGD

更新时间： 2024-11-04 14:54:47

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
10页	1337K
描述
低压 N-ch (≤ 30V )

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中文翻译

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数据手册

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JMCL0410AGD 数据手册

JMCL0410AGD

Description

JMT N And P-channel Enhancement Mode Power MOSFET

Features

Applications

 Battery Protection

 Load Switch

 N-channel: 40V, 16A

R_DS(ON)< 19mΩ @ V_GS= 10V

R_DS(ON)< 22mΩ @ V_GS= 4.5V

 P-channel: -40V, -16A

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

R_DS(ON)< 39mΩ @ V_GS= -10V

R_DS(ON)< 47mΩ @ V_GS= -4.5V

 Excellent Gate Charge x R_DS(ON)Product(FOM)

 Very Low On-resistance R_DS(ON)

 Fast Switching Speed

PDFN5x6-8L-D

Schematic Diagram

Marking and Pin Assignment

Package Marking and Ordering Information

Per Carton

(pcs)

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

13" 5000

CL0410AD

JMCL0410AGD

PDFN5x6-8L-D

TAPING

50000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value-N-channel

Value-P-channel

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

-40

±20

T_C= 25°C

-16

-10

-64

I_D

Continuous Drain Current

T_C= 100°C

Pulsed Drain Current ⁽¹⁾

Single Pulsed Avalanche Energy ⁽²⁾

I_DM

E_AS

P_D

Power Dissipation

T_C= 25°C

Thermal Resistance, Junction to Ambient⁽³⁾

Thermal Resistance, Junction to Case

Junction & Storage Temperature Range

R_θJA

R_θJC

T_J, T_STG

°C/W

°C

2.5

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.0

12 3 4 5 6 7...10

中文翻译

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