Datasheet > JL28F640J3C-115

JL28F640J3C-115

更新时间： 2024-11-26 15:45:47

品牌	Logo	应用领域
英特尔 - INTEL		光电二极管内存集成电路闪存
页数	文件大小	规格书
68页	968K
描述
Flash, 4MX16, 115ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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技术参数
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JL28F640J3C-115 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSSOP, TSSOP56,.8,20
针数：	56	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.84	最长访问时间：	115 ns
备用内存宽度：	8	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	NO
JESD-30 代码：	R-PDSO-G56	JESD-609代码：	e3
长度：	18.4 mm	内存密度：	67108864 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	64
端子数量：	56	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP56,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：	4/8 words	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
编程电压：	2.7 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.2 mm
部门规模：	128K	最大待机电流：	0.00012 A
子类别：	Flash Memories	最大压摆率：	0.08 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	MATTE TIN	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	切换位：	NO
类型：	NOR TYPE	宽度：	14 mm
Base Number Matches：	1

JL28F640J3C-115 数据手册

Intel StrataFlash^®Memory (J3)

28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

programming time

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-019

July 2004

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