Datasheet > JL28F320J3C-110

JL28F320J3C-110

更新时间： 2024-11-26 15:45:47

品牌	Logo	应用领域
英特尔 - INTEL		光电二极管内存集成电路闪存
页数	文件大小	规格书
68页	968K
描述
Flash, 2MX16, 110ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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技术参数
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JL28F320J3C-110 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSSOP, TSSOP56,.8,20
针数：	56	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.84	Is Samacsys：	N
最长访问时间：	110 ns	备用内存宽度：	8
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	NO	JESD-30 代码：	R-PDSO-G56
JESD-609代码：	e3	长度：	18.4 mm
内存密度：	33554432 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
部门数/规模：	32	端子数量：	56
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	2MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP56,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	页面大小：	4/8 words
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	3/3.3 V	编程电压：	2.7 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	128K
最大待机电流：	0.00012 A	子类别：	Flash Memories
最大压摆率：	0.08 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	MATTE TIN
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
切换位：	NO	类型：	NOR TYPE
宽度：	14 mm	Base Number Matches：	1

JL28F320J3C-110 数据手册

Intel StrataFlash^®Memory (J3)

28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

programming time

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-019

July 2004

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中文翻译

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与JL28F320J3C-110相关器件

型号	品牌	获取价格	描述	数据表
JL28F640J3C-115	INTEL	获取价格	Flash, 4MX16, 115ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JL2951BGA	TI	获取价格	FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6V DROPOUT, MBCY8
JL2951BGA	NSC	获取价格	IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6 V DROPOUT, MBCY8, Fixed/Adjustable Po
JL2951BGA	ROCHESTER	获取价格	FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6 V DROPOUT, MBCY8
JL2951BPA	TI	获取价格	Adjustable Micropower Voltage Regulators
JL2951BPA	NSC	获取价格	IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6 V DROPOUT, CDIP8, Fixed/Adjustable Po
JL2951S2A	ETC	获取价格	Fixed & Adjustable Voltage Regulator
JL2951SGA	NSC	获取价格	IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6 V DROPOUT, MBCY8, Fixed/Adjustable Po
JL2951SPA	ETC	获取价格	Fixed & Adjustable Voltage Regulator
JL2A-SERIES	ETC	获取价格	Optoelectronic

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