Datasheet > SC10120F

SC10120F

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
晶恒 - JINGHENG		/
页数	文件大小	规格书
6页	897K
描述
SILICON CARBIDE SCHOTTKY DIODE

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SC10120F 数据手册

D2 SC10120M2

SC10120 SC10120F SC10120

SILICON CARBIDE SCHOTTKY DIODE

Reverse Voltage - 1200 Volts

E M I C O N D U C T O R

Forward Current - 10Amperes

DESCRIPTION

SiC Schottky Diode has no switching loss,provides improved

system efficiency against Si diodes by utilizing new semiconductor

material-Silicon Carbide,enables higher operating frequency,

and helps increasing power density and reduction of system

size /cost.Its high reliability ensures robust operation during

surge or over_voltage conditions.

TO-220AC

ITO-220AC

Sc10120

SC10120F

SC10120

SC10120F

FEATURES

Max Junction Temperature 175°C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery/No Forward Recovery

MECHANICAL DATA

TO-263AC

TO-252

SC10120D2

SC10120M2

Case: JEDEC TO-220AC/ITO-220AC/TO-263AC/TO-252AC

Molding compound meets UL94V-0 flammability rating

Terminals: Lead solderable per J-STD-002 and JESD22-B102

Polarity: As marked

10120M2

Mounting Torque: 10 in-Ibs maximum

TYPICAL APPLICATIONS

General Purpose

SMPS, Solar inverter, UPS

Power Switching Circuits

KEY PERFORMANCE AND PACKAGE PARAMETERS

Type

V_DC

T_j,max

Package

I_F

1200V

10A

30nC

175℃

TO-220AC

ITO-220AC

TO-263AC

TO-252AC

Sc10120

SC10120F

SC10120D2

SC10120M2

6-1

JINAN JINGHENG ELECTRONICS CO., LTD.

HTTP://WWW.JINGHENG.CN

12 3 4 5 6

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