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2SA1179 PDF预览

2SA1179

更新时间: 2024-01-10 14:32:56
品牌 Logo 应用领域
JCST 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 58K
描述
TRANSISTOR (PNP)

2SA1179 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61JESD-609代码:e3
端子面层:Matte Tin (Sn)Base Number Matches:1

2SA1179 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
2SA1179 TRANSISTOR (PNP)  
FEATURES  
. High breakdown voltage  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MARKING: M  
MAXIMUM RATINGS* TA=25unless otherwise noted  
Symbol  
Parameter  
Value  
-55  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
V
Collector Current -Continuous  
Total Device Dissipation  
-150  
200  
mA  
mW  
PD  
TJ, Tstg  
Junction and Storage Temperature  
-55-125  
*These ratings are limiting values above which the serviceability of any semiconductor device may be  
impaired.  
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
-55  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO Ic=-10u A,IE=0  
V(BR)CEO Ic=-1mA,IB=0  
V(BR)EBO IE=-10 u A,IC=0  
V
V
ICBO  
IEBO  
VCB=-35V,IE=0  
-0.1  
-0.1  
400  
-0.5  
-1.0  
u A  
u A  
Emitter cut-off current  
VEB=-4V,IC=0  
DC current gain  
hFE  
VCE=-6V,IC=-1mA  
IC=-50mA,IB=-5mA  
IC=-50mA,IB=-5mA  
VCE=-6V,IC=-10mA  
VCB=-6V,IE=0,f=1MHz  
200  
Collector-emitter saturation voltage  
Base -emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
180  
4
MHz  
pF  
Collector output capacitance  
Cob  

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