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JDP3C04TU PDF预览

JDP3C04TU

更新时间: 2024-11-06 14:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 174K
描述
EOL announced

JDP3C04TU 数据手册

 浏览型号JDP3C04TU的Datasheet PDF文件第2页浏览型号JDP3C04TU的Datasheet PDF文件第3页 
JDP3C04TU  
TOSHIBA Diode Silicon Epitaxial Pin Type  
JDP3C04TU  
VHF~UHF Band RF Attenuator Applications  
Unit: mm  
2.1±0.1  
1.7±0.1  
Useful for small size package  
Low capacitance: C = 0.3 pF (typ.)  
T
Low series resistance: r = 3.0 (typ.)  
s
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
R
Forward current  
I
mA  
°C  
°C  
F
Junction temperature  
Storage temperature range  
T
j
150  
T
stg  
55 to 150  
1.Anode1  
2.Anode2  
3.Cathode  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
UFM  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-2Y1A  
Weight: 6.6 mg (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 10 μA  
R
50  
0.1  
1.0  
V
μA  
V
R
Reverse current  
Forward voltage  
Capacitance  
I
V = 50 V  
R
R
V
F
C
T
I
= 50 mA  
F
0.92  
0.3  
3.0  
V
= 1 V, f = 1 MHz  
pF  
Ω
R
Series resistance  
r
s
I
= 10 mA, f = 100 MHz  
F
Note: Signal level when capacitance is measured: Vsig = 100 mV  
rms  
Marking  
Pin Assignment  
BB2  
Start of commercial production  
2005-12  
1
2014-03-01  

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