Datasheet > JDH2S02SL

JDH2S02SL

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	124K
描述
10 V/0.01 A Schottky Barrier Diode, SOD-962(SL2)

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技术参数
数据手册

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JDH2S02SL 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.60	风险等级：	5.23
二极管类型：	MIXER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JDH2S02SL 数据手册

JDH2S02SL

Schottky Barrier Diode Silicon Epitaxial Planar

JDH2S02SL

1. Applications

•

Radio-Frequency Power Detectors

2. Features

•

Suitable for reducing the product size due to the use of a small two-pin package supporting high-density

mounting

3. Packaging and Internal Circuit

1: Cathode

2: Anode

SL2

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

Forward current



Junction temperature

Storage temperature

125

Tstg

-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be using proper

antistatic precautions for the worktable, operator, solder iron and so on.

Start of commercial production

2015-09

2015-11-13

Rev.2.0

12 3 4 5 6

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