Datasheet > JCT812F

JCT812F

更新时间： 2023-12-06 20:10:36

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1036K
描述
标准型单向可控硅

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JCT812F 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT812F

12A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of large

current, JCT812F of silicon controlled rectifiers provides

high dV/dt rate with strong resistance to electromagnetic

interference. It is especially recommended for use on solid

state relay, motorcycle, power charger, T-tools etc. From

all three terminals to external heatsink,JCT812F provides

a rated insulation voltage of 2000 V_RMS,complying with UL

standards (File ref: E252906). Package TO-220F is RoHS

compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

≤15

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤86℃)

RMS on-state current (T_C≤86℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

800

7.6

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

140

I_TSM

154

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

150

A/μs

TEL：+86-513-68528666

http://www.jjwdz.com

12 3 4 5 6 7 8

下载PDF

与JCT812F相关器件

型号	品牌	描述	获取价格	数据表
JCT812H	JJM	标准型单向可控硅	获取价格
JCT812K	JJM	标准型单向可控硅	获取价格
JCT812TA	JJM	标准型单向可控硅	获取价格
JCT812TC	JJM	标准型单向可控硅	获取价格
JCT812TF	JJM	标准型单向可控硅	获取价格
JCT816A	JJM	标准型单向可控硅	获取价格